page . 1 december 01.2009-rev.00 PJ4800 fea tures ? r ds(on) , v gs @10v,i ds @8a=20m ? r ds(on) , v gs @5.0v,i ds @6a=31m ? adva nced t rench proce ss te chnology ? high den sity cell de sign for ultra low on-re sista nce ? spe ci ally de signed f or dc/dc converters ? fully chara cterized a vala nche v oltage a nd current ? pb free product : 99% sn above can meet rohs environment substance directive request mechanical da ta ? ca se: soic-08 pa ck age ? t ermin als : soldera ble per mil-st d-750d,method 1036.3 ? marking : 4800 30v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age 2. surfa ce mounted on fr4 board, t < 10 se c p an jit reser ves the right t o improve product design,functions and reliability without notice pin assignment 1. source 2. source 3. source 4. gate 5. drain 6. drain 7. drain 8. drain s o i c - 0 8 1 2 3 4 8 7 6 5 parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs + 20 v continous drain current t c =25 o c i d 8 a pulsed drain current (1) i dm 32 a avalanche energy l =0.1mh,i d =8a,v dd =25v e as 3.2 mj power dissipation t c =25 o c p d 3 w t c =75 o c 2 o perating junction and stroage temperature range t j ,t stg -55 to +175 o c junction-to-ambient thermal resistance(pcb mounted) 2 r j a 50 o c/w
page . 2 december 01.2009-rev.00 PJ4800 electrical characteristics ( t c=25oc,u nle ss otherwise noted ) note : plus te st: pluse w idth < 300us, duty cycle < 2% . v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma p a r a m e t e r s ym b o l t e s t c o n d it io n s m in . t yp. m a x . u n it s ta t ic d r a i n- s o ur c e b r e a k d o w n v o l t a g e v ( b r ) d s s v g s = 0 v, i d = 2 5 0 a 3 0 - - v g a t e t hr e s ho l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 1 - 3 v d r a i n- s o ur c e o n- s t a t e r e s i s t a nc e r d s ( o n ) v g s = 1 0 v , i d = 8 a - 1 6 2 0 m v g s = 5 v , i d = 6 a - 2 3 3 1 m g a t e - b o d y l e a k a g e i g s s v d s = 0 v , v g s = + 2 0 v - - + 1 0 0 na z e r o g a t e v o l t a g e d r a i n c u r r e nt i d s s v d s = 2 4 v, v g s = 0 v - - 1 a v d s = 2 4 v , v g s = 0 v , t j = 1 2 5 o c - - 2 5 a o n- s t a t e d r a i n c ur r e nt i d ( o n ) v d s = 1 0 v , v g s = 1 0 v 8 - - a f o r w a r d tr a ns c o nd uc t a nc e g f s v d s = 5 v , i d = 8 a 1 0 - - s d yn a m ic to t a l g a t e c ha r g e q g v d s = 1 5 v , v g s = 5 v , i d = 8 a - 7 . 0 - nc v d s = 1 5 v , v g s = 1 0 v i d = 8 a - 1 4 . 2 - nc g a t e - s o ur c e c ha r g e q g s - 1 . 2 2 - nc g a t e - d r a i n c ha r g e q g d - 3 . 4 4 - nc t ur n- o n d e l a y ti m e t d ( o n) v d s = 1 5 v , i d = 1 a , v g s = 1 0 v r g s = 6 - 7 . 8 - ns r i s e ti m e t r - 11 . 6 - ns t ur n- o f f d e l a y ti m e t d ( o f f ) - 2 8 . 8 - ns f a l l ti m e t f - 5 . 6 - ns i np ut c a p a c i t a nc e c is s v g s = 0 v , v d s = 1 5 v f = 1 m h z - 5 2 0 - p f o ut p ut c a p a c i t a nc e c o s s - 11 2 - p f r e ve r s e tr a ns f e r c a p a c i t a nc e c r s s - 9 8 - p f s o u r c e - d r a in d io d e r a tin g s a n d c h a r a c te r is tic s c o nt i nuo us c ur r e nt i s - - 2.3 a f o r w a r d v o l t a g e v s d i f = 2 . 3 a , v g s = 0 v - - 1.2 v
0 1 0 20 30 40 50 60 70 80 90 2 4 6 8 10 v gs - gate-to-source voltage (v) i d = 8a t j = 25 o c 125 o c 0 1 0 20 30 40 50 60 0 10 20 30 40 i d - drain current (a) v g s = 5.0v vgs=10.0v fig.1 output characteristric PJ4800 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric 0 1 0 20 30 40 0 1 2 3 4 5 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 10v, 6v 4.5v 3.0v 3.5v 5.0v 4.0v 0 1 0 20 30 40 1.5 2 2.5 3 3.5 4 4.5 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =10v t j = 125 o c 25 o c -55 o c r ds(on) - on-resistance (m ) r ds(on) - on-resistance (m ) 0 1 0 20 30 40 50 60 70 80 90 2 4 6 8 10 v gs - gate-to-source voltage (v) i d = 8a t j = 25 o c 125 o c 0 1 0 20 30 40 50 60 0 10 20 30 40 i d - drain current (a) v g s = 5.0v vgs=10.0v fig.1 output characteristric PJ4800 typical characteristics curves ( ta=25 , unless otherwise noted) fig.2 transfer characteristric fig.3 on resistance vs drain current fig.4 on resistance vs gate to source voltage n6 fig.5 on resistance vs junction temperature fig.6 capacitance p age. 3 0 1 0 20 30 40 0 1 2 3 4 5 i d - drain-to-source current (a) v ds - drain-to-source voltage (v) v g s = 10v, 6v 4.5v 3.0v 3.5v 5.0v 4.0v 0 2 00 400 600 800 1000 0 5 10 15 20 25 c - capacitance (pf) v ds - drain-to-source voltage (v) ciss coss crss f = 1mhz v g s = 0v 0.6 0 .8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 r ds(on) - on-resistance(normalized) t j - junction temperature ( o c) v g s =10 v i d =8.0a 0 1 0 20 30 40 1.5 2 2.5 3 3.5 4 4.5 i d - drain source current (a) v gs - gate-to-source voltage (v) v d s =10v t j = 125 o c 25 o c -55 o c r ds(on) - on-resistance (m ) r ds(on) - on-resistance (m )
fig. 7 gate charge waveform PJ4800 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage 0 2 4 6 8 1 0 0 4 8 12 16 v gs - gate-to-source voltage (v) q g - gate charge (nc) v d s =15 v i d =8.0a 0.6 0 .7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 v th - g-s threshold voltage (normalized) t j - junction temperature ( o c) 29 30 31 32 33 34 35 36 -50 -25 0 25 50 75 100 125 150 tj - junction temperature (oc) 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v - 55 o c bv dss - breakdown voltage (v) fig. 7 gate charge waveform PJ4800 typical characteristics curves ( ta=25 , unless otherwise noted) fig.8 source-drain diode forward voltage fig.9 breakdown voltage vs junction temperature =kbk====================================================================================================================================================================== page. 4 fig.10 threshold voltage vs junction temperature 0 2 4 6 8 1 0 0 4 8 12 16 v gs - gate-to-source voltage (v) q g - gate charge (nc) v d s =15 v i d =8.0a 0.6 0 .7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 v th - g-s threshold voltage (normalized) t j - junction temperature ( o c) 29 30 31 32 33 34 35 36 -50 -25 0 25 50 75 100 125 150 tj - junction temperature (oc) 0.01 0 .1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-to-drain voltage (v) t j = 125 o c 25 o c v g s = 0v - 55 o c bv dss - breakdown voltage (v)
page . 5 december 01.2009-rev.00 mounting pad layout ? packing information t/r - 3k per 13" plastic reel order information legal statement copyright panjit international, inc 2010 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others.
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